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MMDF2C03HD
N ? Channel
P ? Channel
1200
1000
V DS = 0 V V GS = 0 V
C iss
T J = 25 ° C
1200
1000
C iss
V DS = 0 V V GS = 0 V
T J = 25 ° C
800
800
600
C rss
C iss
600 C rss
C iss
400
400
C oss
200
C oss
C rss
200
C rss
0
10
5
0
5
10
15
20
25
30
0
10
5
0
5
10
15
20
25
30
V GS
V DS
V GS
V DS
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
12
24
12
24
QT
10
QT
20
9
V DS
V GS
18
8
V DS
V GS
16
6
Q1
Q2
12
6
Q1
Q2
I D = 2 A
T J = 25 ° C
12
4
8
3
6
Q3
I D = 3 A
T J = 25 ° C
2
Q3
4
0
0
2
4
6
8
10
0
12
0
0
2
4
6
8
10
12
14
0
16
Q g , TOTAL GATE CHARGE (nC)
Figure 8. Gate ? To ? Source and Drain ? To ? Source
Voltage versus Total Charge
1000
1000
Q g , TOTAL GATE CHARGE (nC)
Figure 8. Gate ? To ? Source and Drain ? To ? Source
Voltage versus Total Charge
100
10
V DD = 15 V
I D = 3 A
V GS = 10 V
T J = 25 ° C
t d(off)
t r
t f
t d(on)
100
10
V DD = 15 V
I D = 2 A
V GS = 10 V
T J = 25 ° C
t f
t d(off)
t r
t d(on)
1
1
10
100
1
1
10
100
R G , GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
http://onsemi.com
6
R G , GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
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